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The calculation of electronic parameters of an Ag/chitin/n-Si Schottky barrier diode
We have formed polymeric organic compound chitin film on n-Si substrate by adding a solution of polymeric compound chitin in N,N-dimethylacetamide and lithium chloride on top of an n-Si substrate and then evaporating solvent. It has been seen that the chitin/n-Si contact has demonstrated clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current-voltage (I-V) curves studied at room temperature. The barrier height and ideality factor values of 0.959 eV and 1.553, respectively, for this structure have been obtained from the forward bias I-V characteristics. Furthermore, the energy distribution of the interface state density located in the semiconductor band gap at the chitin/n-Si substrate in the energy range from (Ec – 0.897) to (Ec – 0.574) eV have been determined from the I-V characteristics. The interface state density, Nss, ranges from 5.965 × 1012 cm-2 eV-1 in (Ec – 0.897) eV to 1.706 × 1013 cm-2 eV-1 in (Ec – 0.574) eV and has an exponential rise with bias this energy range.
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Reference：
Tetrahydropyran – Wikipedia,
Tetrahydropyran – an overview | ScienceDirect Topics